| P1 |
K. D. Hobart - Naval Research Labatory - SiC MEMS technology based on wafer bonding and deep etching |
| P2 |
N. Razek - EV Group - Plasma activated wafer bonding of LiTaO3 and LiNbO3 |
| P3 |
S. Brand - Fraunhofer IWMS - High-Resolution inspection for Bonding Voids in Solid-Liquid-Interdiffusion (SLID) Bond interfaces by acoustic GHz-Microscopy |
| P4 |
B. Beekley - UCLA - Interface Evolution of Au-Au Thermocompression Bonding |
| P5 |
M. Eichler - Fraunhofer IST - Improved bonding behavior by plasma coating for roughened glass surfaces |
| P6 |
F. Buja - IMEC - Influence of contact area on oxide-oxide fusion bonding quality between 200mmquartz and silicon wafers. |
| P7 |
D. Wünsch - Fraunhofer ENAS - Temporary wafer bonding using room temperature mechanical release for MEMS devices |
| P8 |
V. Masteika - AML - Optimisation of New Automated Maszara Testing Tool |
| P9 |
C. Rothhardt - Fraunhofer IOF - Direct boding of laser crystals |
| P10 |
F. Inoue - IMEC - Edge Shape Control for Wafer to Wafer Bonding |
| P11 |
X. Zhang - University of Shanghai - The investigation on improving interface of the InP/Si Wafer Direct Fusion Bonding |
